TPC8212-H(TE12LQ,M

Toshiba Semiconductor and Storage

Product No:

TPC8212-H(TE12LQ,M

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Package:

8-SOP (5.5x6.0)

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Description:

MOSFET 2N-CH 30V 6A SOP8

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Operating Temperature	150°C (TJ)
FET Feature	Logic Level Gate
Configuration	2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds	840pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	16nC @ 10V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	21mOhm @ 3A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	2.3V @ 1mA
Supplier Device Package	8-SOP (5.5x6.0)
Drain to Source Voltage (Vdss)	30V
Series	-
Package / Case	8-SOIC (0.173", 4.40mm Width)
Technology	MOSFET (Metal Oxide)
Power - Max	450mW
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	6A
Package	Tape & Reel (TR)
Base Product Number	TPC8212