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TPC8221-H,LQ(S

Toshiba Semiconductor and Storage

Product No:

TPC8221-H,LQ(S

Package:

8-SOP

Batch:

-

Datasheet:

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Description:

MOSFET 2N-CH 30V 6A 8SOP

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C (TJ)
FET Feature -
Configuration 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds 830pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 25mOhm @ 3A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 2.3V @ 100µA
Supplier Device Package 8-SOP
Drain to Source Voltage (Vdss) 30V
Series -
Package / Case 8-SOIC (0.154", 3.90mm Width)
Technology MOSFET (Metal Oxide)
Power - Max 450mW
Mfr Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C 6A
Package Tape & Reel (TR)
Base Product Number TPC8221