TPC8227-H,LQ

Toshiba Semiconductor and Storage

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TPC8227-H,LQ

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8-SOP

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TPC8227-H,LQ

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Operating Temperature	150°C
FET Feature	-
Configuration	2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds	640pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	10nC @ 10V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	33mOhm @ 2.6A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.3V @ 100µA
Supplier Device Package	8-SOP
Drain to Source Voltage (Vdss)	40V
Series	U-MOSVI-H
Package / Case	8-SOIC (0.154", 3.90mm Width)
Technology	MOSFET (Metal Oxide)
Power - Max	1.5W (Ta)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	5.1A
Package	Bulk
Base Product Number	TPC8227