Goford Semiconductor
Product No:
630AT
Manufacturer:
Package:
TO-220
Batch:
-
Datasheet:
-
Description:
N200V,RD(MAX)<250M@10V,RD(MAX)<3
Quantity:
Delivery:
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Operating Temperature | -55°C ~ 150°C (TJ) |
FET Feature | - |
FET Type | N-Channel |
Input Capacitance (Ciss) (Max) @ Vds | 509 pF @ 25 V |
Gate Charge (Qg) (Max) @ Vgs | 11.8 nC @ 10 V |
Mounting Type | Through Hole |
Rds On (Max) @ Id, Vgs | 250mOhm @ 1A, 10V |
Product Status | Active |
Vgs(th) (Max) @ Id | 2.2V @ 250µA |
Supplier Device Package | TO-220 |
Drain to Source Voltage (Vdss) | 200 V |
Power Dissipation (Max) | 83W (Tc) |
Series | - |
Package / Case | TO-220-3 |
Technology | MOSFET (Metal Oxide) |
Mfr | Goford Semiconductor |
Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
Vgs (Max) | ±20V |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Package | Tube |