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G230P06F

Goford Semiconductor

Product No:

G230P06F

Manufacturer:

Goford Semiconductor

Package:

TO-220F

Batch:

-

Datasheet:

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Description:

MOSFET P-CH 60V 42A TO-220F

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type P-Channel
Input Capacitance (Ciss) (Max) @ Vds 4669 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs 62 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 23mOhm @ 10A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package TO-220F
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 67.57W (Tc)
Series -
Package / Case TO-220-3 Full Pack
Technology MOSFET (Metal Oxide)
Mfr Goford Semiconductor
Current - Continuous Drain (Id) @ 25°C 42A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube