G110N06T

Goford Semiconductor

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G110N06T

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Package:

TO-220

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Description:

N60V,RD(MAX)<6.4M@10V,RD(MAX)<8.

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	5538 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	113 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	6.4mOhm @ 20A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	TO-220
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	120W (Tc)
Series	-
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Mfr	Goford Semiconductor
Current - Continuous Drain (Id) @ 25°C	110A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tube