BUK7Y12-100EX

NXP USA Inc.

Product No:

BUK7Y12-100EX

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Package:

LFPAK56, Power-SO8

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Description:

MOSFET N-CH 100V 85A LFPAK56

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	5067 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	68 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	12mOhm @ 25A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 1mA
Supplier Device Package	LFPAK56, Power-SO8
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	238W (Tc)
Series	TrenchMOS™
Package / Case	SC-100, SOT-669
Technology	MOSFET (Metal Oxide)
Mfr	NXP USA Inc.
Current - Continuous Drain (Id) @ 25°C	85A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk