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BUK952R8-60E,127

NXP USA Inc.

Product No:

BUK952R8-60E,127

Manufacturer:

NXP USA Inc.

Package:

TO-220AB

Batch:

-

Datasheet:

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Description:

MOSFET N-CH 60V 120A TO220AB

Quantity:

Delivery:

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In Stock : Please Inquiry

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 17450 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 120 nC @ 5 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 2.6mOhm @ 25A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 2.1V @ 1mA
Supplier Device Package TO-220AB
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 349W (Tc)
Series TrenchMOS™
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Mfr NXP USA Inc.
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Vgs (Max) ±10V
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Package Tube
Base Product Number BUK95