BUK961R7-40E,118

NXP USA Inc.

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BUK961R7-40E,118

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Package:

D2PAK

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Description:

MOSFET N-CH 40V 120A D2PAK

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	15010 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	105.4 nC @ 5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	1.5mOhm @ 25A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	2.1V @ 1mA
Supplier Device Package	D2PAK
Drain to Source Voltage (Vdss)	40 V
Power Dissipation (Max)	324W (Tc)
Series	TrenchMOS™
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Mfr	NXP USA Inc.
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Vgs (Max)	±10V
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Package	Tape & Reel (TR)
Base Product Number	BUK96