BUK9E3R2-40E,127

NXP USA Inc.

Product No:

BUK9E3R2-40E,127

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Package:

I2PAK

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Description:

MOSFET N-CH 40V 100A I2PAK

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	9150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	69.5 nC @ 5 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	2.8mOhm @ 25A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	2.1V @ 1mA
Supplier Device Package	I2PAK
Drain to Source Voltage (Vdss)	40 V
Power Dissipation (Max)	234W (Tc)
Series	TrenchMOS™
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Technology	MOSFET (Metal Oxide)
Mfr	NXP USA Inc.
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Vgs (Max)	±10V
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Package	Tube
Base Product Number	BUK9