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G3S06503D

Global Power Technology-GPT

Product No:

G3S06503D

Package:

TO-263

Batch:

-

Datasheet:

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Description:

DIODE SIL CARB 650V 11.5A TO263

Quantity:

Delivery:

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Payment:

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Product Information

Parameter Info

User Guide

Speed No Recovery Time > 500mA (Io)
Capacitance @ Vr, F 181pF @ 0V, 1MHz
Reverse Recovery Time (trr) 0 ns
Mounting Type Surface Mount
Product Status Active
Supplier Device Package TO-263
Current - Reverse Leakage @ Vr 50 µA @ 650 V
Series -
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology SiC (Silicon Carbide) Schottky
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 3 A
Mfr Global Power Technology-GPT
Voltage - DC Reverse (Vr) (Max) 650 V
Package Cut Tape (CT)
Operating Temperature - Junction -55°C ~ 175°C
Current - Average Rectified (Io) 11.5A