G3S12010H

Global Power Technology-GPT

Product No:

G3S12010H

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Package:

TO-220F

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Description:

DIODE SIC 1.2KV 16.5A TO220F

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Speed	No Recovery Time > 500mA (Io)
Capacitance @ Vr, F	765pF @ 0V, 1MHz
Reverse Recovery Time (trr)	0 ns
Mounting Type	Through Hole
Product Status	Active
Supplier Device Package	TO-220F
Current - Reverse Leakage @ Vr	50 µA @ 1200 V
Series	-
Package / Case	TO-220-2 Full Pack
Technology	SiC (Silicon Carbide) Schottky
Voltage - Forward (Vf) (Max) @ If	1.7 V @ 10 A
Mfr	Global Power Technology-GPT
Voltage - DC Reverse (Vr) (Max)	1200 V
Package	Cut Tape (CT)
Operating Temperature - Junction	-55°C ~ 175°C
Current - Average Rectified (Io)	16.5A