Global Power Technology-GPT
Product No:
G4S06510CT
Manufacturer:
Package:
TO-252
Batch:
-
Description:
DIODE SIL CARBIDE 650V 31A TO252
Quantity:
Delivery:
Payment:
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Speed | No Recovery Time > 500mA (Io) |
Capacitance @ Vr, F | 550pF @ 0V, 1MHz |
Reverse Recovery Time (trr) | 0 ns |
Mounting Type | Surface Mount |
Product Status | Active |
Supplier Device Package | TO-252 |
Current - Reverse Leakage @ Vr | 50 µA @ 650 V |
Series | - |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Technology | SiC (Silicon Carbide) Schottky |
Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |
Mfr | Global Power Technology-GPT |
Voltage - DC Reverse (Vr) (Max) | 650 V |
Package | Cut Tape (CT) |
Operating Temperature - Junction | -55°C ~ 175°C |
Current - Average Rectified (Io) | 31A |