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G3S06504H

Global Power Technology-GPT

Product No:

G3S06504H

Package:

TO-220F

Batch:

-

Datasheet:

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Description:

DIODE SIL CARB 650V 10A TO220F

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

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In Stock : Please Inquiry

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Product Information

Parameter Info

User Guide

Speed No Recovery Time > 500mA (Io)
Capacitance @ Vr, F 181pF @ 0V, 1MHz
Reverse Recovery Time (trr) 0 ns
Mounting Type Through Hole
Product Status Active
Supplier Device Package TO-220F
Current - Reverse Leakage @ Vr 50 µA @ 650 V
Series -
Package / Case TO-220-2 Full Pack
Technology SiC (Silicon Carbide) Schottky
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 4 A
Mfr Global Power Technology-GPT
Voltage - DC Reverse (Vr) (Max) 650 V
Package Cut Tape (CT)
Operating Temperature - Junction -55°C ~ 175°C
Current - Average Rectified (Io) 10A