GCMS080B120S1-E1

SemiQ

Product No:

GCMS080B120S1-E1

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Package:

SOT-227

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Description:

SIC 1200V 80M MOSFET & 10A SBD S

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1374 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs	58 nC @ 20 V
Mounting Type	Chassis Mount
Rds On (Max) @ Id, Vgs	100mOhm @ 20A, 20V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 10mA
Supplier Device Package	SOT-227
Drain to Source Voltage (Vdss)	1200 V
Power Dissipation (Max)	142W (Tc)
Series	-
Package / Case	SOT-227-4, miniBLOC
Technology	SiCFET (Silicon Carbide)
Mfr	SemiQ
Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Vgs (Max)	+25V, -10V
Drive Voltage (Max Rds On, Min Rds On)	20V
Package	Tube
Base Product Number	GCMS080