GP2T040A120H

SemiQ

Product No:

GP2T040A120H

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Package:

TO-247-4

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Description:

SIC MOSFET 1200V 40M TO-247-4L

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3192 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs	118 nC @ 20 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	52mOhm @ 40A, 20V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 10mA
Supplier Device Package	TO-247-4
Drain to Source Voltage (Vdss)	1200 V
Power Dissipation (Max)	322W (Tc)
Series	-
Package / Case	TO-247-4
Technology	SiCFET (Silicon Carbide)
Mfr	SemiQ
Current - Continuous Drain (Id) @ 25°C	63A (Tc)
Vgs (Max)	+25V, -10V
Drive Voltage (Max Rds On, Min Rds On)	20V
Package	Tube