GP2T080A120U

SemiQ

Product No:

GP2T080A120U

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Package:

TO-247-3

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Description:

SIC MOSFET 1200V 80M TO-247-3L

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1377 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs	58 nC @ 20 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	100mOhm @ 20A, 20V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 10mA
Supplier Device Package	TO-247-3
Drain to Source Voltage (Vdss)	1200 V
Power Dissipation (Max)	188W (Tc)
Series	-
Package / Case	TO-247-3
Technology	SiCFET (Silicon Carbide)
Mfr	SemiQ
Current - Continuous Drain (Id) @ 25°C	35A (Tc)
Vgs (Max)	+25V, -10V
Drive Voltage (Max Rds On, Min Rds On)	20V
Package	Tube
Base Product Number	GP2T080A