PHB110NQ06LT,118

NXP USA Inc.

Product No:

PHB110NQ06LT,118

Manufacturer:

Package:

D2PAK

Batch:

Datasheet:

Description:

MOSFET N-CH 55V 75A D2PAK

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Telephone

Country

Quantity

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3960 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	45 nC @ 5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	7mOhm @ 25A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	2V @ 1mA
Supplier Device Package	D2PAK
Drain to Source Voltage (Vdss)	55 V
Power Dissipation (Max)	200W (Tc)
Series	TrenchMOS™
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Mfr	NXP USA Inc.
Current - Continuous Drain (Id) @ 25°C	75A (Tc)
Vgs (Max)	±15V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	PHB11