PHD36N03LT,118

NXP USA Inc.

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PHD36N03LT,118

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DPAK

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Description:

MOSFET N-CH 30V 43.4A DPAK

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	690 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	18.5 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	17mOhm @ 25A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	2V @ 250µA
Supplier Device Package	DPAK
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	57.6W (Tc)
Series	TrenchMOS™
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Mfr	NXP USA Inc.
Current - Continuous Drain (Id) @ 25°C	43.4A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	PHD36