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PSMN9R5-100XS,127

NXP USA Inc.

Product No:

PSMN9R5-100XS,127

Manufacturer:

NXP USA Inc.

Package:

TO-220F

Batch:

-

Datasheet:

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Description:

MOSFET N-CH 100V 44.2A TO220F

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 4454 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs 81.5 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 9.6mOhm @ 10A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 4V @ 1mA
Supplier Device Package TO-220F
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 52.6W (Tc)
Series -
Package / Case TO-220-3 Full Pack, Isolated Tab
Technology MOSFET (Metal Oxide)
Mfr NXP USA Inc.
Current - Continuous Drain (Id) @ 25°C 44.2A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number PSMN9