R6014YND3TL1

Rohm Semiconductor

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R6014YND3TL1

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Package:

TO-252

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Description:

NCH 600V 14A, TO-252, POWER MOSF

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	890 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	20 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	260mOhm @ 5A, 12V
Product Status	Active
Vgs(th) (Max) @ Id	6V @ 1.4mA
Supplier Device Package	TO-252
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	132W (Tc)
Series	-
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Mfr	Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C	14A (Tc)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V, 12V
Package	Tape & Reel (TR)
Base Product Number	R6014