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R6086YNZC17

Rohm Semiconductor

Product No:

R6086YNZC17

Manufacturer:

Rohm Semiconductor

Package:

TO-3PF

Batch:

-

Datasheet:

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Description:

NCH 600V 33A, TO-3PF, POWER MOSF

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 5100 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 44mOhm @ 17A, 12V
Product Status Active
Vgs(th) (Max) @ Id 6V @ 4.6mA
Supplier Device Package TO-3PF
Drain to Source Voltage (Vdss) 600 V
Power Dissipation (Max) 114W (Tc)
Series -
Package / Case TO-3P-3 Full Pack
Technology MOSFET (Metal Oxide)
Mfr Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C 33A (Tc)
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V, 12V
Package Tube