RF4E100AJTCR

Rohm Semiconductor

Product No:

RF4E100AJTCR

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Package:

HUML2020L8

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Description:

MOSFET N-CH 30V 10A HUML2020L8

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1460 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	13 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	12.4mOhm @ 10A, 4.5V
Product Status	Active
Vgs(th) (Max) @ Id	1.5V @ 1mA
Supplier Device Package	HUML2020L8
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	2W (Tc)
Series	-
Package / Case	8-PowerUDFN
Technology	MOSFET (Metal Oxide)
Mfr	Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C	10A (Ta)
Vgs (Max)	±12V
Drive Voltage (Max Rds On, Min Rds On)	4.5V
Package	Tape & Reel (TR)
Base Product Number	RF4E100