RF6C055BCTCR

Rohm Semiconductor

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RF6C055BCTCR

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Package:

TUMT6

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Description:

MOSFET P-CHANNEL 20V 5.5A TUMT6

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	1080 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	15.2 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	25.8mOhm @ 5.5A, 4.5V
Product Status	Active
Vgs(th) (Max) @ Id	1.2V @ 1mA
Supplier Device Package	TUMT6
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	1W (Tc)
Series	-
Package / Case	6-SMD, Flat Leads
Technology	MOSFET (Metal Oxide)
Mfr	Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C	5.5A (Ta)
Vgs (Max)	±8V
Drive Voltage (Max Rds On, Min Rds On)	4.5V
Package	Tape & Reel (TR)
Base Product Number	RF6C055