RQ3L050GNTB

Rohm Semiconductor

Product No:

RQ3L050GNTB

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Package:

8-HSMT (3.2x3)

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Description:

MOSFET N-CHANNEL 60V 12A 8HSMT

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	300 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs	2.8 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	61mOhm @ 5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 25µA
Supplier Device Package	8-HSMT (3.2x3)
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	14.8W (Tc)
Series	-
Package / Case	8-PowerVDFN
Technology	MOSFET (Metal Oxide)
Mfr	Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	RQ3L050