RS1L120GNTB

Rohm Semiconductor

Product No:

RS1L120GNTB

Manufacturer:

Package:

8-HSOP

Batch:

Datasheet:

Description:

MOSFET N-CH 60V 12A/36A 8HSOP

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Telephone

Country

Quantity

Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1330 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs	26 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	12.7mOhm @ 12A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.7V @ 200µA
Supplier Device Package	8-HSOP
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	3W (Ta)
Series	-
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Mfr	Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C	12A (Ta), 36A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	RS1L