RSR010N10HZGTL

Rohm Semiconductor

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RSR010N10HZGTL

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Package:

TSMT3

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Description:

MOSFET N-CH 100V 1A TSMT3

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	140 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	3.5 nC @ 5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	520mOhm @ 1A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 1mA
Supplier Device Package	TSMT3
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	700mW (Ta)
Series	Automotive, AEC-Q101
Package / Case	SC-96
Technology	MOSFET (Metal Oxide)
Mfr	Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C	1A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Package	Tape & Reel (TR)
Base Product Number	RSR010