RT1A040ZPTR

Rohm Semiconductor

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RT1A040ZPTR

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Package:

8-TSST

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Description:

MOSFET P-CH 12V 4A TSST8

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Operating Temperature	150°C
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	2350 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs	30 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	30mOhm @ 4A, 4.5V
Product Status	Not For New Designs
Vgs(th) (Max) @ Id	1V @ 1mA
Supplier Device Package	8-TSST
Drain to Source Voltage (Vdss)	12 V
Power Dissipation (Max)	1.25W (Ta)
Series	-
Package / Case	8-SMD, Flat Lead
Technology	MOSFET (Metal Oxide)
Mfr	Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C	4A (Ta)
Vgs (Max)	±10V
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	RT1A040