RX3G18BGNC16

Rohm Semiconductor

Product No:

RX3G18BGNC16

Manufacturer:

Package:

TO-220AB

Batch:

Datasheet:

Description:

NCH 40V 180A, TO-220AB, POWER MO

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Telephone

Country

Quantity

Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	12000 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs	168 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	1.64mOhm @ 90A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 1mA
Supplier Device Package	TO-220AB
Drain to Source Voltage (Vdss)	40 V
Power Dissipation (Max)	125W (Tc)
Series	-
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Mfr	Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C	180A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tube
Base Product Number	RX3G18