Rohm Semiconductor
Product No:
SCT2120AFC
Manufacturer:
Package:
TO-220AB
Batch:
-
Description:
SICFET N-CH 650V 29A TO220AB
Quantity:
Delivery:
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Operating Temperature | 175°C (TJ) |
FET Feature | - |
FET Type | N-Channel |
Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 500 V |
Gate Charge (Qg) (Max) @ Vgs | 61 nC @ 18 V |
Mounting Type | Through Hole |
Rds On (Max) @ Id, Vgs | 156mOhm @ 10A, 18V |
Product Status | Obsolete |
Vgs(th) (Max) @ Id | 4V @ 3.3mA |
Supplier Device Package | TO-220AB |
Drain to Source Voltage (Vdss) | 650 V |
Power Dissipation (Max) | 165W (Tc) |
Series | - |
Package / Case | TO-220-3 |
Technology | SiCFET (Silicon Carbide) |
Mfr | Rohm Semiconductor |
Current - Continuous Drain (Id) @ 25°C | 29A (Tc) |
Vgs (Max) | +22V, -6V |
Drive Voltage (Max Rds On, Min Rds On) | 18V |
Package | Tube |
Base Product Number | SCT2120 |