SCT2750NYTB

Rohm Semiconductor

Product No:

SCT2750NYTB

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Package:

TO-268

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Description:

SICFET N-CH 1700V 5.9A TO268

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Operating Temperature	175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	275 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs	17 nC @ 18 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	975mOhm @ 1.7A, 18V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 630µA
Supplier Device Package	TO-268
Drain to Source Voltage (Vdss)	1700 V
Power Dissipation (Max)	57W (Tc)
Series	-
Package / Case	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Technology	SiCFET (Silicon Carbide)
Mfr	Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C	5.9A (Tc)
Vgs (Max)	+22V, -6V
Drive Voltage (Max Rds On, Min Rds On)	18V
Package	Tape & Reel (TR)
Base Product Number	SCT2750