SCT2H12NYTB

Rohm Semiconductor

Product No:

SCT2H12NYTB

Manufacturer:

Package:

TO-268

Batch:

Datasheet:

Description:

SICFET N-CH 1700V 4A TO268

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Telephone

Country

Quantity

Operating Temperature	175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	184 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs	14 nC @ 18 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	1.5Ohm @ 1.1A, 18V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 410µA
Supplier Device Package	TO-268
Drain to Source Voltage (Vdss)	1700 V
Power Dissipation (Max)	44W (Tc)
Series	-
Package / Case	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Technology	SiCFET (Silicon Carbide)
Mfr	Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C	4A (Tc)
Vgs (Max)	+22V, -6V
Drive Voltage (Max Rds On, Min Rds On)	18V
Package	Tape & Reel (TR)
Base Product Number	SCT2H12