SCT2H12NZGC11

Rohm Semiconductor

Product No:

SCT2H12NZGC11

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Package:

TO-3PFM

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Description:

SICFET N-CH 1700V 3.7A TO3PFM

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Operating Temperature	175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	184 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs	14 nC @ 18 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	1.5Ohm @ 1.1A, 18V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 900µA
Supplier Device Package	TO-3PFM
Drain to Source Voltage (Vdss)	1700 V
Power Dissipation (Max)	35W (Tc)
Series	-
Package / Case	TO-3PFM, SC-93-3
Technology	SiCFET (Silicon Carbide)
Mfr	Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C	3.7A (Tc)
Vgs (Max)	+22V, -6V
Drive Voltage (Max Rds On, Min Rds On)	18V
Package	Tube
Base Product Number	SCT2H12