SCT3080KLGC11

Rohm Semiconductor

Product No:

SCT3080KLGC11

Manufacturer:

Package:

TO-247N

Batch:

Datasheet:

Description:

SICFET N-CH 1200V 31A TO247N

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Telephone

Country

Quantity

Operating Temperature	175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	785 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs	60 nC @ 18 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	104mOhm @ 10A, 18V
Product Status	Active
Vgs(th) (Max) @ Id	5.6V @ 5mA
Supplier Device Package	TO-247N
Drain to Source Voltage (Vdss)	1200 V
Power Dissipation (Max)	165W (Tc)
Series	-
Package / Case	TO-247-3
Technology	SiCFET (Silicon Carbide)
Mfr	Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C	31A (Tc)
Vgs (Max)	+22V, -4V
Drive Voltage (Max Rds On, Min Rds On)	18V
Package	Tube
Base Product Number	SCT3080