SI1070X-T1-GE3

Vishay Siliconix

Product No:

SI1070X-T1-GE3

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Package:

SC-89 (SOT-563F)

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Description:

MOSFET N-CH 30V 1.2A SC89-6

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	385 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	8.3 nC @ 5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	99mOhm @ 1.2A, 4.5V
Product Status	Active
Vgs(th) (Max) @ Id	1.55V @ 250µA
Supplier Device Package	SC-89 (SOT-563F)
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	236mW (Ta)
Series	TrenchFET®
Package / Case	SOT-563, SOT-666
Technology	MOSFET (Metal Oxide)
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	1.2A (Ta)
Vgs (Max)	±12V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	SI1070