SI1401EDH-T1-GE3

Vishay Siliconix

Product No:

SI1401EDH-T1-GE3

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Package:

SC-70-6

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Description:

MOSFET P-CH 12V 4A SC70-6

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	36 nC @ 8 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	34mOhm @ 5.5A, 4.5V
Product Status	Active
Vgs(th) (Max) @ Id	1V @ 250µA
Supplier Device Package	SC-70-6
Drain to Source Voltage (Vdss)	12 V
Power Dissipation (Max)	1.6W (Ta), 2.8W (Tc)
Series	TrenchFET®
Package / Case	6-TSSOP, SC-88, SOT-363
Technology	MOSFET (Metal Oxide)
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	4A (Tc)
Vgs (Max)	±10V
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	SI1401