SI1489EDH-T1-GE3

Vishay Siliconix

Product No:

SI1489EDH-T1-GE3

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Package:

SC-70-6

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Description:

MOSFET P-CH 8V 2A SOT-363

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	16 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	48mOhm @ 3A, 4.5V
Product Status	Obsolete
Vgs(th) (Max) @ Id	700mV @ 250µA
Supplier Device Package	SC-70-6
Drain to Source Voltage (Vdss)	8 V
Power Dissipation (Max)	2.8W (Tc)
Series	TrenchFET®
Package / Case	6-TSSOP, SC-88, SOT-363
Technology	MOSFET (Metal Oxide)
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	2A (Tc)
Vgs (Max)	±5V
Drive Voltage (Max Rds On, Min Rds On)	1.2V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	SI1489