Vishay Siliconix
Product No:
SI2301CDS-T1-GE3
Manufacturer:
Package:
SOT-23-3 (TO-236)
Batch:
-
Description:
MOSFET P-CH 20V 3.1A SOT23-3
Quantity:
Delivery:
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Operating Temperature | -55°C ~ 150°C (TJ) |
FET Feature | - |
FET Type | P-Channel |
Input Capacitance (Ciss) (Max) @ Vds | 405 pF @ 10 V |
Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 4.5 V |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 112mOhm @ 2.8A, 4.5V |
Product Status | Active |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Supplier Device Package | SOT-23-3 (TO-236) |
Drain to Source Voltage (Vdss) | 20 V |
Power Dissipation (Max) | 860mW (Ta), 1.6W (Tc) |
Series | TrenchFET® |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Technology | MOSFET (Metal Oxide) |
Mfr | Vishay Siliconix |
Current - Continuous Drain (Id) @ 25°C | 3.1A (Tc) |
Vgs (Max) | ±8V |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
Package | Tape & Reel (TR) |
Base Product Number | SI2301 |