minImg

SI2301CDS-T1-GE3

Vishay Siliconix

Product No:

SI2301CDS-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

SOT-23-3 (TO-236)

Batch:

-

Datasheet:

pdf.png

Description:

MOSFET P-CH 20V 3.1A SOT23-3

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Certif02 Certif07 Certif03 Certif04 Certif10

Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type P-Channel
Input Capacitance (Ciss) (Max) @ Vds 405 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 4.5 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 112mOhm @ 2.8A, 4.5V
Product Status Active
Vgs(th) (Max) @ Id 1V @ 250µA
Supplier Device Package SOT-23-3 (TO-236)
Drain to Source Voltage (Vdss) 20 V
Power Dissipation (Max) 860mW (Ta), 1.6W (Tc)
Series TrenchFET®
Package / Case TO-236-3, SC-59, SOT-23-3
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 3.1A (Tc)
Vgs (Max) ±8V
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Package Tape & Reel (TR)
Base Product Number SI2301