SI2311DS-T1-GE3

Vishay Siliconix

Product No:

SI2311DS-T1-GE3

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Package:

SOT-23-3 (TO-236)

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Description:

MOSFET P-CH 8V 3A SOT23-3

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	970 pF @ 4 V
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	45mOhm @ 3.5A, 4.5V
Product Status	Obsolete
Vgs(th) (Max) @ Id	800mV @ 250µA
Supplier Device Package	SOT-23-3 (TO-236)
Drain to Source Voltage (Vdss)	8 V
Power Dissipation (Max)	710mW (Ta)
Series	TrenchFET®
Package / Case	TO-236-3, SC-59, SOT-23-3
Technology	MOSFET (Metal Oxide)
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	3A (Ta)
Vgs (Max)	±8V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	SI2311