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SI2315BDS-T1-GE3

Vishay Siliconix

Product No:

SI2315BDS-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

SOT-23-3 (TO-236)

Batch:

-

Datasheet:

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Description:

MOSFET P-CH 12V 3A SOT23-3

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type P-Channel
Input Capacitance (Ciss) (Max) @ Vds 715 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 4.5 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 50mOhm @ 3.85A, 4.5V
Product Status Active
Vgs(th) (Max) @ Id 900mV @ 250µA
Supplier Device Package SOT-23-3 (TO-236)
Drain to Source Voltage (Vdss) 12 V
Power Dissipation (Max) 750mW (Ta)
Series TrenchFET®
Package / Case TO-236-3, SC-59, SOT-23-3
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 3A (Ta)
Vgs (Max) ±8V
Drive Voltage (Max Rds On, Min Rds On) 4.5V
Package Tape & Reel (TR)
Base Product Number SI2315