SI2371EDS-T1-BE3

Vishay Siliconix

Product No:

SI2371EDS-T1-BE3

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Package:

SOT-23-3 (TO-236)

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Description:

P-CHANNEL 30-V (D-S) MOSFET

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	35 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	45mOhm @ 3.7A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	1.5V @ 250µA
Supplier Device Package	SOT-23-3 (TO-236)
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	1W (Ta), 1.7W (Tc)
Series	-
Package / Case	TO-236-3, SC-59, SOT-23-3
Technology	MOSFET (Metal Oxide)
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	3.7A (Ta), 4.8A (Tc)
Vgs (Max)	±12V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 10V
Package	Tape & Reel (TR)