SI3127DV-T1-GE3

Vishay Siliconix

Product No:

SI3127DV-T1-GE3

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Package:

6-TSOP

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Description:

MOSFET P-CH 60V 3.5A/13A 6TSOP

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	833 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs	30 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	89mOhm @ 1.5A, 4.5V
Product Status	Active
Vgs(th) (Max) @ Id	3V @ 250µA
Supplier Device Package	6-TSOP
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	2W (Ta), 4.2W (Tc)
Series	TrenchFET®
Package / Case	SOT-23-6 Thin, TSOT-23-6
Technology	MOSFET (Metal Oxide)
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	3.5A (Ta), 13A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	SI3127