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SI3441BDV-T1-E3

Vishay Siliconix

Product No:

SI3441BDV-T1-E3

Manufacturer:

Vishay Siliconix

Package:

6-TSOP

Batch:

-

Datasheet:

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Description:

MOSFET P-CH 20V 2.45A 6TSOP

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 8 nC @ 4.5 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 90mOhm @ 3.3A, 4.5V
Product Status Obsolete
Vgs(th) (Max) @ Id 850mV @ 250µA
Supplier Device Package 6-TSOP
Drain to Source Voltage (Vdss) 20 V
Power Dissipation (Max) 860mW (Ta)
Series TrenchFET®
Package / Case SOT-23-6 Thin, TSOT-23-6
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 2.45A (Ta)
Vgs (Max) ±8V
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Package Tape & Reel (TR)
Base Product Number SI3441