SI3443DDV-T1-GE3

Vishay Siliconix

Product No:

SI3443DDV-T1-GE3

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Package:

6-TSOP

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Description:

MOSFET P-CH 20V 4A/5.3A 6TSOP

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	970 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	30 nC @ 8 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	47mOhm @ 4.5A, 4.5V
Product Status	Active
Vgs(th) (Max) @ Id	1.5V @ 250µA
Supplier Device Package	6-TSOP
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	1.7W (Ta), 2.7W (Tc)
Series	TrenchFET®
Package / Case	SOT-23-6 Thin, TSOT-23-6
Technology	MOSFET (Metal Oxide)
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	4A (Ta), 5.3A (Tc)
Vgs (Max)	±12V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	SI3443