SI3460DV-T1-GE3

Vishay Siliconix

Product No:

SI3460DV-T1-GE3

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Package:

6-TSOP

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Description:

MOSFET N-CH 20V 5.1A 6TSOP

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	20 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	27mOhm @ 5.1A, 4.5V
Product Status	Obsolete
Vgs(th) (Max) @ Id	450mV @ 1mA (Min)
Supplier Device Package	6-TSOP
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	1.1W (Ta)
Series	TrenchFET®
Package / Case	SOT-23-6 Thin, TSOT-23-6
Technology	MOSFET (Metal Oxide)
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	5.1A (Ta)
Vgs (Max)	±8V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	SI3460