SI4151DY-T1-GE3

Vishay Siliconix

Product No:

SI4151DY-T1-GE3

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Package:

8-SOIC

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Description:

P-CHANNEL 30-V (D-S) MOSFET SO-8

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	3250 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	87 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	7.5mOhm @ 10A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	8-SOIC
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	3.1W (Ta), 5.6W (Tc)
Series	TrenchFET® Gen IV
Package / Case	8-SOIC (0.154", 3.90mm Width)
Technology	MOSFET (Metal Oxide)
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	15.2A (Ta), 20.5A (Tc)
Vgs (Max)	±25V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)