SI4190DY-T1-GE3

Vishay Siliconix

Product No:

SI4190DY-T1-GE3

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Package:

8-SOIC

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Description:

MOSFET N-CH 100V 20A 8-SOIC

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FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	58 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	8.8mOhm @ 15A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	2.8V @ 250µA
Supplier Device Package	8-SOIC
Drain to Source Voltage (Vdss)	100 V
Series	-
Package / Case	8-SOIC (0.154", 3.90mm Width)
Technology	MOSFET (Metal Oxide)
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	20A (Tc)
Package	Cut Tape (CT)
Base Product Number	SI4190