SI4386DY-T1-GE3

Vishay Siliconix

Product No:

SI4386DY-T1-GE3

Manufacturer:

Package:

8-SOIC

Batch:

Datasheet:

Description:

MOSFET N-CH 30V 11A 8SO

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Telephone

Country

Quantity

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	18 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	7mOhm @ 16A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	8-SOIC
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	1.47W (Ta)
Series	TrenchFET®
Package / Case	8-SOIC (0.154", 3.90mm Width)
Technology	MOSFET (Metal Oxide)
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	11A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	SI4386