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SI4463BDY-T1-GE3

Vishay Siliconix

Product No:

SI4463BDY-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

8-SOIC

Batch:

-

Datasheet:

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Description:

MOSFET P-CH 20V 9.8A 8SO

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 56 nC @ 4.5 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 11mOhm @ 13.7A, 10V
Product Status Active
Vgs(th) (Max) @ Id 1.4V @ 250µA
Supplier Device Package 8-SOIC
Drain to Source Voltage (Vdss) 20 V
Power Dissipation (Max) 1.5W (Ta)
Series TrenchFET®
Package / Case 8-SOIC (0.154", 3.90mm Width)
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 9.8A (Ta)
Vgs (Max) ±12V
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Package Tape & Reel (TR)
Base Product Number SI4463