SI4829DY-T1-GE3

Vishay Siliconix

Product No:

SI4829DY-T1-GE3

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Package:

8-SOIC

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Description:

MOSFET P-CH 20V 2A 8SO

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	Schottky Diode (Isolated)
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	210 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	8 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	215mOhm @ 2.5A, 4.5V
Product Status	Obsolete
Vgs(th) (Max) @ Id	1.5V @ 250µA
Supplier Device Package	8-SOIC
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	2W (Ta), 3.1W (Tc)
Series	LITTLE FOOT®
Package / Case	8-SOIC (0.154", 3.90mm Width)
Technology	MOSFET (Metal Oxide)
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	2A (Tc)
Vgs (Max)	±12V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	SI4829